時 間：2023年5月17日（周三）上午10:00
地 點：武漢大學(xué)櫻頂老圖書館
主講人：John Robertson教授英國皇家科學(xué)院/工程院院士
題 目：Metal Silicide/Si interfaces: Contact Resistances and Origin of Fermi Level Depinning
主講人簡介：
John Robertson（生于1950年）是劍橋大學(xué)工程系的電子學(xué)教授。他是電子材料方面的專家。John Robertson教授從事開創(chuàng)性工作，開發(fā)具有工業(yè)價值的電子材料，例如HfO2（二氧化鉿）、類金剛石碳(DLC)和碳納米管。他對HfO2導(dǎo)帶偏移的預(yù)測使其能夠取代SiO2（二氧化硅）作為互補(bǔ)金屬氧化物半導(dǎo)體(CMOS)晶體管中的柵極氧化物，從而繼續(xù)CMOS尺寸微縮。他對高k材料缺陷性質(zhì)以及與金屬的界面接觸的進(jìn)一步研究使高k材料得以成功實施。他在DLC沉積工藝和表征方面的工作促成了最薄、最光滑的保護(hù)膜的開發(fā)，以及硬盤驅(qū)動器內(nèi)存密度的持續(xù)擴(kuò)展。
Robertson教授1971年本科畢業(yè)于劍橋大學(xué)物理專業(yè)，1975年在劍橋大學(xué)獲博士學(xué)位。他的博士學(xué)位是非晶半導(dǎo)體中電子態(tài)的研究。1975年至1994年，他在Central Electricity Generating Board工作，之后于1994年加入劍橋大學(xué)工程系。
Robertson教授于2015年入選英國皇家科學(xué)院院士（FRS），于2020年入選英國皇家工程院院士（FREng）。同時，他是美國物理學(xué)會、電氣和電子工程師學(xué)會（IEEE）和材料研究學(xué)會的會士，也是《鉆石及相關(guān)材料》雜志的名譽(yù)編輯。他因在半導(dǎo)體上集成高k氧化物方面的理論貢獻(xiàn)而于2023年獲得IEEE Cledo Brunetti獎。
Brief Introduction of Professor John Robertson
John Robertson FRS (born 1950) is a Professor of Electronics, in the Department of Engineering at the University of Cambridge. Professor Robertson is an expert in electronic materials. He has undertaken seminal work to develop industrially valuable electronic materials such as HfO2(Hafnium dioxide), diamond-like carbon (DLC) and carbon nanotubes. His prediction of the conduction band offset of HfO2allowed it to replace SiO2(Silicon dioxide) as the gate oxide in complementary metal oxide semiconductor (CMOS) transistors, and so to continue CMOS scaling. His further work on its defects and interfaces with metals allowed its successful implementation. His work on the deposition process and characterisation of DLC allowed the development of the thinnest and smoothest protective films, and the continued scaling of hard-disk drive memory densities.
Professor Robertson graduated from University of Cambridge in Physics in 1971 and with a PhD in 1975. His PhD was the research on electronic states in amorphous semiconductors. He then worked for the Central Electricity Generating Board from 1975 to 1994, before joining the Department of Engineering at Cambridge in 1994.
Robertson was elected a Fellow of the Royal Society (FRS) in 2015 and a Fellow of the Royal Academy of Engineering (FREng) in 2020. He was also a Fellow of the American Physical Society(APS), the Institute of Electrical and Electronics Engineers (IEEE) and the Materials Research Society (MRS), and an Emeritus Editor of the journal Diamond and Related Materials. He was awarded the IEEE Cledo Brunetti Award in 2023 for theoretical contributions to the integration of high-k oxides on semiconductors.
